56 citations · 82 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 56 cited
Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush +5
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a…
cond-mat.mtrl-sci2017★ 26 cited
An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si
Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan +4
The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface tha…