168 citations · 282 across the 11 of their papers we have counts for
8 papers · 1 filter
Two-Dimensional Altermagnetism in Epitaxial CrSb Ultrathin Films
Keren Li, Yuzhong Hu, Yue Li +12
Altermagnets constitute an emerging class of collinear magnets that exhibit zero net magnetization yet host spin-split electronic bands arising from non-relativistic spin-space-gro…
Controllable and Continuous Quantum Phase Transitions in Intrinsic Magnetic Topological Insulator
Shengjie Xu, Zhijian Shi, Ming Yang +7
The intrinsic magnetic topological material MnBi2Te4 has demonstrated great potential to investigate the interplay between topology and magnetism, which opens up new avenues for ma…
Epitaxial growth of bilayer Bi(110) on two-dimensional ferromagnetic Fe3GeTe2
Yilian Xi, Mengting Zhao, Haifeng Feng +6
Heterostructures of two-dimensional (2D) layered materials with selective compositions play an important role in creating novel functionalities. Effective interface coupling betwee…
Kondo holes in the 2D itinerant Ising ferromagnet Fe3GeTe2
Mengting Zhao, Binbin Chen, Yilian Xi +10
Heavy fermion (HF) states emerge in correlated quantum materials due to the interplay between localized magnetic moments and itinerant electrons, but rarely appear in 3d-electron s…
Experimental Realization of Two-Dimensional Buckled Lieb lattice
Haifeng Feng, Chen Liu, Si Zhou +9
Two-dimensional (2D) materials with a Lieb lattice can host exotic electronic band structures. Such a system does not exist in nature, and it is also difficult to obtain in the lab…
Realization of Flat Band with Possible Nontrivial Topology in Electronic Kagome Lattice
Zhi Li, Jincheng Zhuang, Lan Chen +9
The energy dispersion of fermions or bosons vanishes in momentum space if destructive quantum interference occurs in a frustrated Kagome lattice with only nearest-neighbour (NN) ho…
Point defects in epitaxial silicene on Ag(111) surface
Hongsheng Liu, Haifeng Feng, Yi Du +3
Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor…
Metal-Silicene Interaction Studied by Scanning Tunneling Microscopy
Zhi Li, Haifeng Feng, Jincheng Zhuang +5
Ag atoms have been deposited on 3x3 silicene and R3xR3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectrosco…