3 citations · 6 across the 6 of their papers we have counts for
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physics.app-ph2020★ 2 cited
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
physics.app-ph2020★ 3 cited
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…
cond-mat.mtrl-sci2020
Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge
Zhigang Song, Wei-Jun Fan, C. S. Tan +4
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped -type Ge and confirmed in experiment the PFS…