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20172026
most citedElectrically injected GeSn lasers on Si operating up to 100 K

3 citations · 8 across the 10 of their papers we have counts for

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Showing 2018 · cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2018

UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices

P. C. Grant, W. Dou, B. Alharthi +9

The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…