2 papers
cond-mat.mtrl-sci2018
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
P. C. Grant, W. Dou, B. Alharthi +9
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…
physics.app-ph2017
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…