1 citations · 1 across the 2 of their papers we have counts for
4 papers
Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics
Grey Abernathy, Yiyin Zhou, Solomon Ojo +8
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
P. C. Grant, W. Dou, B. Alharthi +9
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…