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20172021
most citedTopological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

50 citations · 62 across the 3 of their papers we have counts for

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Showing 2018Show all

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cond-mat.mes-hall2018

Two-terminal spin-orbit torque magnetoresistive random access memory

Noriyuki Sato, Fen Xue, Robert M. White +2

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast oper…