33 citations · 92 across the 6 of their papers we have counts for
6 papers
Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages
Ningtao Liu, Hengrui Zhang, Shujun Zhu +7
This study demonstrates a wafer-scale growth of a 2-inch Si-doped -Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral -Ga2O3 MOSFET arrays. The…
One-Dimensional Metallic Polymeric Nitrogen
Kewei Ding, Junyi Miao, Ying Liu +7
The pressure-induced metallic states of light elements attract significant attention, because of potential applications as high-temperature superconductor and high-energy-density m…
Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection
Wenrui Zhang, Wei Wang, Jinfu Zhang +7
Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, sy…
Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces
Wenrui Zhang, Shaobo Cheng, Christopher M Rouleau +7
Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, p…
Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure
Wenrui Zhang, Alessandro R. Mazza, Elizabeth Skoropata +11
The 2D layered Ruddlesden-Popper crystal structure can host a broad range of functionally important behaviors. Here we establish extraordinary configurational disorder in a two dim…
Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ
Weiwei Li, Qian He, Le Wang +27
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress…