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Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…
Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality
V. M. Pudalov, M. E. Gershenson, H. Kojima
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after…
Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers
V. M. Pudalov, M. E. Gershenson, H. Kojima
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the cri…