Critical State Flux Penetration and Linear Microwave Vortex Response in YBa_2Cu_3O_{7-x} Films

Abstract

The vortex contribution to the dc field (H) dependent microwave surface impedance Z_s = R_s+iX_s of YBa_2Cu_3O_{7-x} thin films was measured using suspended patterned resonators. Z_s(H) is shown to be a direct measure of the flux density B(H) enabling a very precise test of models of flux penetration. Three regimes of field-dependent behavior were observed: (1) Initial flux penetration occurs on very low field scales H_i(4.2K) 100Oe, (2) At moderate fields the flux penetration into the virgin state is in excellent agreement with calculations based upon the field-induced Bean critical state for thin film geometry, parametrized by a field scale H_s(4.2K) J_c*d 0.5T, (3) for very high fields H >>H_s, the flux density is uniform and the measurements enable direct determination of vortex parameters such as pinning force constants α_p and vortex viscosity η. However hysteresis loops are in disagreement with the thin film Bean model, and instead are governed by the low field scale H_i, rather than by H_s. Geometric barriers are insufficient to account for the observed results.

20 pages, LaTeX type, Uses REVTeX style files, Submitted to Physical Review B, 600 dpi PostScript file with high resolution figures available at http://sagar.physics.neu.edu/preprints.html