Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Abstract

We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.

3 pages, 2 figures, use revtex.sty. 'The Eleventh International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)',July 19-23, 1999

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