Electrically addressing a single self-assembled quantum dot
arXiv:quant-ph/0612046 · doi:10.1063/1.2190451
Abstract
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.
12 pages, 3 figures
References in corpus (1)
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