Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment

Abstract

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 $\hat{I}¼$m along the CMS $r-\ddot{I}•$ plane can be achieved after an irradiation fluence of $5.9\times 10^{14}$ n${}_{\mathrm{eq}}/$cm${}^2$. In addition, we show that systematic errors in the position determination can be largely reduced by applying $\hat{I}\cdot$ corrections.

5 pages, 5 figures, presented at the Workshop on Tracking in High Multiplicity Environments (TIME2005), October 3-7 2005, Zurich, Switzerland