Realizing a stable magnetic double-well potential on an atom chip
arXiv:physics/0503112 · doi:10.1140/epjd/e2005-00190-9
Abstract
We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.