A measurement of Lorentz Angle of radiation-hard Pixel Sensors
arXiv:physics/0012050 · doi:10.1016/S0168-9002(01)00364-3
Abstract
Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.
arXiv comment6 pages, 5 figures. Presented at Pixel 2000 conference (Genoa, Italy, june 2000). To be published in the Prooceedings of the conference on NIM