Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC

Abstract

The band structures of 6H and 4H SiC calculated by means of the FP-LMTO method are used to determine the effective mass tensors for their conduction-band minima. The results are shown to be consistent with recent optically detected cyclotron resonance measurements and predict an unusual band filling dependence for 6H-SiC.

5 pages including 4 postscript figures incorporated with epsfig figs. available as part 2: sicfig.uu self-extracting file to appear in Phys. Rev. B: Aug. 15 (Rapid Communications)

Cited by in corpus (2)

• Second harmonic generation in SiC polytypes
• First-principles study on structure and anisotropy of high N-atom density layer in 4H-SiC