Effect of a Domain Wall on the Conductance Quantization in a Ferromagnetic Nanowire

Abstract

The effect of the domain wall (DW) on the conductance in a ballistic ferromagnetic nanowire (FMNW) is revisited by exploiting a specific perturbation theory which is effective for a thin DW; the thinness is often the case in currently interested conductance measurements on FMNWs. Including the Hund coupling between carrier spins and local spins in a DW, the conductance of a FMNW in the presence of a very thin DW is calculated within the Landauer-Büttiker formalism. It is revealed that the conductance plateaus are modified significantly, and the switching of the quantization unit from $e^2/h$ to ``about $2e^2/h$'' is produced in a FMNW by the introduction of a thin DW. This accounts well for recent observations in a FMNW.

5 pages, 2 figures, Corrected typos and added references

References in corpus (3)

• Conductance Quantization and Magnetoresistance in Magnetic Point Contacts
• Negative Domain Wall Resistance in Ferromagnets
• Ballistic and diffuse transport through a ferromagnetic domain wall

Cited by in corpus (7)

• Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts
• Electronic transport through domain walls in ferromagnetic nanowires: Co-existence of adiabatic and non-adiabatic spin dynamics
• Effects of Domain Wall on Electronic Transport Properties in Mesoscopic Wire of Metallic Ferromagnets
• Domain Wall Resistance based on Landauer's Formula
• The Ferromagnetic Heisenberg XXZ chain in a pinning field
• Electronic pressure on ferromagnetic domain wall
• Electron Transport through Disordered Domain Walls: Coherent and Incoherent Regimes