Monte Carlo Simulations of Doped, Diluted Magnetic Semiconductors - a System with Two Length Scales
arXiv:cond-mat/9912395 · doi:10.1142/S0129183199001248
Abstract
We describe a Monte Carlo simulation study of the magnetic phase diagram of diluted magnetic semiconductors doped with shallow impurities in the low concentration regime. We show that because of a wide distribution of interaction strengths, the system exhibits strong quantum effects in the magnetically ordered phase. A discrete spin model, found to closely approximate the quantum system, shows long relaxation times, and the need for specialized cluster algorithms for updating spin configurations. Results for a representative system are presented.
12 pages, latex, 7 figures; submitted to International Journal of Modern Physics C, Proceedings of the U.S.-Japan Bilateral Seminar: Understanding and Conquering Long Time Scales in Computer Simulations
Cited by in corpus (13)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Ferromagnetic semiconductors
- Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
- Carrier-induced ferromagnetism in p-Zn1-xMnxTe
- Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors
- Spin Waves in Disordered III-V Diluted Magnetic Semiconductors
- Two-component approach for thermodynamic properties in diluted magnetic semiconductors
- Nanoscale ferromagnetism in non-magnetic doped semiconductors
- Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs
- Exchange anisotropy, disorder and frustration in diluted, predominantly ferromagnetic, Heisenberg spin systems
- Polaronic mechanism of Nagaoka ferromagnetism in Hubbard models
- Nagaoka ferromagnetism in doped Hubbard models in optical lattices
- Nonlocal effects on magnetism in the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As