Magnetic ordering in GaAlAs:Mn double well structure
arXiv:cond-mat/9912018 · doi:10.1063/1.372731
Abstract
The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.
3 figures
Cited by in corpus (6)
- Ferromagnetism in magnetically doped III-V semiconductors
- Phase Diagram of Diluted Magnetic Semiconductor Quantum Wells
- Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices
- In search of antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction
- Spin-polarized transport in GaMnAs multilayers
- Hole spin polarization in GaAlAs:Mn structures