Internal Friction of Amorphous Silicon in a Magnetic Field
arXiv:cond-mat/9911102 · doi:10.1103/PhysRevB.61.9902
Abstract
The internal friction of e-beam amorphous silicon was measured in a magnetic field between 0 and 6 T, from 1.5-20 K, and was found to be independent of the field to better than 8%. It is concluded that the low energy excitations observed in this experiment are predominantly atomic in nature.
4 pages, 4 figures, REVTeX