Dynamical Mean-Field Solution for a Model of Metal-Insulator Transitions in Moderately Doped Manganites
arXiv:cond-mat/9910446 · doi:10.1103/PhysRevB.58.15310
Abstract
We propose that a specific spatial configuration of lattice sites that energetically favor {\it 3+} or {\it 4+} Mn ions in moderately doped manganites constitutes approximately a spatially random two-energy-level system. Such an effect results in a mechanism of metal-insulator transitions that appears to be different from both the Anderson transition and the Mott-Hubbard transition. Correspondingly, a disordered Kondo lattice model is put forward, whose dynamical mean-field solution agrees reasonably with experiments.
4 pages, 2 eps figures, Revtex. First submitted to PRL on May 16, 1997
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Cited by in corpus (6)
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