Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7

Abstract

Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is responsible for the magneto-transport properties. In contrast to perovskite CMR materials, the anomalous Hall coefficient is negligible even in the ferromagnetic state due to negligibly small skew scattering. The characteristic feature in Tl2Mn2O7 is that the carrier density changes with temperature and the magnetic field. The carrier density increases around TC as the temperature is lowered or as the magnetic field is increased, which explains the CMR of this material. The conduction-band-edge shift, which is caused by the strong s-d interaction between localized Mn moments and s-like conduction electrons, is a possible mechanism for the carrier density change.

7 REVTeX pages, 5 eps figures, submitted to PRL

References in corpus (1)

• Double Exchange Alone Does Not Explain the Resistivity of $L{a}_{1-x}S{r}_{x}Mn{O}_3$

Cited by in corpus (8)

• Extrinsic Magnetotransport Phenomena in Ferromagnetic Oxides
• Nonlinear Hall effect as a signature of electronic phase separation in the semimetallic ferromagnet EuB6
• Lattice dynamical study of optical modes in Tl2Mn2O7 and In2Mn2O7 pyrochlores
• Hall effect in heavy-fermion metals
• Charge Dynamics in the Colossal Magneto-Resistance Pyrochlore Tl2Mn2O7
• First order transition and phase separation in pyrochlores with colossal-magnetoresistance
• Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7
• Transport Properties for and Intermediate Valence Model of Tl${}_2$Mn${}_2$O${}_7$