Computer simulation of low-energy excitations in amorphous silicon with voids

Abstract

We use empirical molecular dynamics technique to study the low-energy vibrations in a large 4096 atom model for pure amorphous silicon and a set of models with voids of different size based on it. Numerical vibrational eigenvalues and eigenvectors for our models are obtained by exact diagonalization of their dynamical matrices. Our calculations show that localized low-energy vibrational excitations of rather complex structure are present in amorphous silicon models with voids. According to their spatial localization patterns we make an attempt to classify these excitations as modes associated with the void and "mixed" modes associated with the interaction of the void with strained regions of silicon network.

Was presented at ICAMS18 conference, Snowbird UT, August 1999. Submitted to J. of Non-Cryst. Solids

References in corpus (3)

• Interatomic Potential for Silicon Defects and Disordered Phases
• Environment Dependent Interatomic Potential for Bulk Silicon
• Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids

Cited by in corpus (5)

• Thermodynamic Behavior of a Model Covalent Material Described by the Environment-Dependent Interatomic Potential
• Realistic inversion of diffraction data for an amorphous solid: the case of amorphous silicon
• Sample dependence of the structural, vibrational, and electronic properties of a-Si:H: A density-functional-based tight-binding study
• Tight-binding study of structure and vibrations of amorphous silicon
• Two-level systems and growth-induced metastability in hydrogenated amorphous silicon