Spin dependent scattering of a domain-wall of controlled size
arXiv:cond-mat/9909229 · doi:10.1103/PhysRevB.61.12216
Abstract
Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall in the Co wire, the thickness of which can be controlled by an external magnetic field. Comparing magnetization, resistivity, and magnetoresistance studies of single Co nanowires, of GdCo layers, and of the coupled system, gives evidence for an additional contribution to the magnetoresistance when the domain wall is compressed by a magnetic field. This contribution is interpreted as the spin dependent scattering within the domain wall when the wall thickness becomes smaller than the spin diffusion length.
9 pages, 13 figures
References in corpus (5)
- Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires
- Negative Domain Wall Resistance in Ferromagnets
- Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films
- Ballistic electron transport through magnetic domain walls
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