Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

Abstract

We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double-barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double-barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.

13 pages including 3 figures. Accepted for publication in Superlattices and Microstructures

References in corpus (4)

• Random-Matrix Theory of Quantum Transport
• Angle dependence of Andreev scattering at semiconductor-superconductor interfaces
• Distribution functions and current-correlations in normal-metal--superconductor hetero-structures
• Conductance enhancement in quantum point contact-semiconductor-superconductor devices

Cited by in corpus (8)

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• Josephson effect in a junction coupled to an electron reservoir
• Tunneling in partial coherence through a series of barriers: an explicit result from a pure dephasing model
• Survival of ${\Phi }_0/2$ periodicity in presence of incoherence in asymmetric Aharonov-Bohm rings
• A comparative study of some models of incoherence at the mesoscopic scale
• Side-gate modulation of critical current in mesoscopic Josephson junction