Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

Abstract

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.

REVTeX, 3 pages, 3 figures, to appear in Applied Physics Letters

Cited by in corpus (7)

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• Cell size distribution in a random tessellation of space governed by the Kolmogorov-Johnson-Mehl-Avrami model: Grain size distribution in crystallization
• Direct numerical simulation of homogeneous nucleation and growth in a phase-field model using cell dynamics method
• A statistical theory of nucleation in the presence of uncharacterised impurities
• Lattice model for kinetics and grain size distribution in crystallization
• Cell Dynamics Simulation of Kolmogorov-Johnson-Mehl-Avrami Kinetics of Phase Transformation
• Dynamic scaling and stochastic fractal in nucleation and growth processes