Low-temperature dephasing in disordered conductors: experimental aspects
arXiv:cond-mat/9908099 · doi:10.1002/(SICI)1521-3889(199911)8:7/9<559::AID-ANDP559>3.0.CO;2-7
Abstract
What is the lowest temperature to which one can trace the growth of the dephasing time in low-dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of the dephasing time (hot-electron effects, dephasing by external noise). Recent progress in our understanding of the electron-phonon interaction in disordered conductors is also briefly discussed.
10 pages, 5 figures, uses annalen.cls, presented at Localization-99, to be published in Annalen der Physik
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