Effects of carrier concentration on the superfluid density of high-T_c cuprates
arXiv:cond-mat/9903117 · doi:10.1103/PhysRevB.60.14617
Abstract
The absolute values and temperature, T, dependence of the in-plane magnetic penetration depth, , of La_{2-x}Sr_xCuO_4 and HgBa_2CuO_{4+δ} have been measured as a function of carrier concentration. We find that the superfluid density, , changes substantially and systematically with doping. The values of are closely linked to the available low energy spectral weight as determined by the electronic entropy just above T_c and the initial slope of increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between and the normal-state (or pseudo) energy gap.
4 pages and 5 figures, submitted to Phys. Rev. Lett
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