paper

Reply to the Comment on ``Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers''

arXiv:cond-mat/9901117

Abstract

This is a Reply to the Comment (cond-mat/9812331) by Kravchenko et al. on our earlier work (cond-mat/9812216).

3 pages, 1 figure

Reply to the Comment on ``Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers'' · wovepaper