Population Inversion Induced by Resonant States in Semiconductors

Abstract

We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.

4 pages, 3 figures submitted to Phys.Rev.Letters