Bond-versus-site doping models for off-chain-doped Haldane-gap system Y Ba Ni O
arXiv:cond-mat/9811084 · doi:10.1103/PhysRevB.58.12672
Abstract
Using the density matrix renormalization-group technique, we calculate the impurity energy levels for two different effective models of off-chain doping for quasi-one-dimensional Heisenberg chain compound Y Ba Ni O: ferromagnetic bond doping and antiferromagnetic site spin-1/2 doping. Thresholds of the impurity strength for the appearance of localized states are found for both models. However, the ground-state and low-energy excitations for weak impurity strength are different for these two models and the difference can be detected by experiments.
5 pages, 5 eps figures included, to be published in Phys. Rev. B
References in corpus (7)
- Large-Scale Numerical Evidence for Bose Condensation in the S=1 Antiferromagnetic Chain in a Strong Field
- Finite-lattice extrapolations for a Haldane gap antiferromagnet
- Spin Dynamics of Hole Doped
- Impurity state in Haldane gap for S=1 Heisenberg antiferromagnetic chain with bond doping
- Propagating S=1/2 particles in S=1 Haldane gap systems
- Effect of a Spin-1/2 Impurity on the Spin-1 Antiferromagnetic Heisenberg Chain
- Impurity Energy Level Within The Haldane Gap