The transverse magnetoresistance of the two-dimensional chiral metal

Abstract

We consider the two-dimensional chiral metal, which exists at the surface of a layered, three-dimensional sample exhibiting the integer quantum Hall effect. We calculate its magnetoresistance in response to a component of magnetic field perpendicular to the sample surface, in the low temperature, but macroscopic, regime where inelastic scattering may be neglected. The magnetoresistance is positive, following a Drude form with a field scale, $B_0={\Phi }_0/a{l}_{\text{el}}$, given by the transverse field strength at which one quantum of flux, ${\Phi }_0$, passes through a rectangle with sides set by the layer-spacing, $a$, and the elastic mean free path, $l_{\text{el}}$. Experimental measurement of this magnetoresistance may therefore provide a direct determination of the elastic mean free path in the chiral metal.

submitted to Phys Rev B

References in corpus (2)

• Conductances, Conductance Fluctuations, and Level Statistics on the Surface of Multilayer Quantum Hall States
• Quantum Hall Effect in Three Dimensional Layered Systems

Cited by in corpus (7)

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• Gapless layered three-dimensional fractional quantum Hall states
• The effects of interactions and disorder in the two-dimensional chiral metal
• Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System
• Transport between edge states in multilayer integer quantum Hall systems: exact treatment of Coulomb interactions and disorder
• Edge Dynamics in Quantum Hall Bilayers II: Exact Results with Disorder and Parallel Fields
• On the dephasing time of the chiral metal