Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors
arXiv:cond-mat/9807327 · doi:10.1088/0953-8984/10/38/012
Abstract
Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when . On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.
arXiv comment8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter"