Paramagnetic structure for the soliton of the $30^{\circ }$ partial dislocation in silicon

Abstract

Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30${}^{\circ }$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

5 pages, 4 figures

References in corpus (1)

• A period-doubled structure for the 90-degree partial dislocation in silicon

Cited by in corpus (3)

• Interatomic Potential for Silicon Defects and Disordered Phases
• Multiresolution analysis of electronic structure: semicardinal and wavelet bases
• Ab initio mechanical response: internal friction and structure of divacancies in silicon