Theoretical analysis of the resistively-coupled single-electron transistor
arXiv:cond-mat/9803038 · doi:10.1063/1.121557
Abstract
The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures as small as (where is the junction capacitance) while the voltage gain becomes impossible at $T\agt 10^{-2}e^2/C$.
9 pages (RevTeX), 4 figures (eps)