Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

Abstract

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)${}^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.

revtex, 4 pages

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• Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions
• Coherence and Coulomb blockade in single electron devices: a unified treatment of interaction effects
• Two-loop approximation in the Coulomb blockade problem
• Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength
• Thermal decay of the Coulomb blockade oscillations
• Coulomb blockade in two island systems with highly conductive junctions
• Charge fluctuation between even and odd states of a superconducting island
• Persistent current noise and electron-electron interactions
• Localization and Capacitance Fluctuations in Disordered Au Nano-junctions
• Electron Transport in Metallic Grains
• Persistent current noise in normal and superconducting nanorings