Structural and Electronic Properties of a Wide-gap Semiconductor Alloy: Zn_xMg_{1-x}S_ySe_{1-y}
arXiv:cond-mat/9712109 · doi:10.1103/PhysRevLett.80.4939
Abstract
The structural properties of the solid solutions are determined by a combination of the computational alchemy and the cluster expansion methods with Monte Carlo simulations. We determine the phase diagram of the alloy and show that the homogeneous phase is characterized by a large amount of short-range order occurring among first-nearest neighbors. Electronic-structure calculations performed using the special quasi-random structures approach indicate that the energy gap of the alloy is rather sensitive to this short-range order.
5 pages, 4 postscript figures
Cited by in corpus (9)
- The virtual crystal approximation revisited: Application to dielectric and piezoelectric properties of perovskites
- Special Quasi-ordered Structures: role of short-range order in the semiconductor alloy (GaN)(ZnO)
- Composition and strain dependence of band offsets at metamorphic InGaAs/InAlAs heterostructures
- Electronic structures of doped BaFeAs materials: virtual crystal approximation versus super-cell approach
- Alchemical geometry relaxation
- Special quasirandom structure in heterovalent ionic systems
- Tailored ordering enables high-capacity cathode materials
- Extending the definition of atomic basis sets to atoms with fractional nuclear charge
- Effect of Concentration Fluctuations on Material Properties of Disordered Alloys