Coulomb Drag in Systems with Tunneling Bridges
arXiv:cond-mat/9709037 · doi:10.1103/PhysRevLett.80.2421
Abstract
We study the Coulomb drag effect in double layer electronic systems with local tunneling links. The possibility of tunneling between the layers leads to a pronounced exchange contribution to the transconductance, which is negative and non-vanishing at zero temperature. The diffusive motion of the electrons inside each layer in interplay with the electron-electron interaction cause a distinguishable singular temperature dependence of the transconductance at low temperatures.
References in corpus (4)
Cited by in corpus (7)
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- Nondissipative Drag Conductance as a Topological Quantum Number
- Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism
- Effective Drag Between Strongly Inhomogeneous Layers: Exact Results and Applications
- Drag and Hall drag in a bi-layer system with pinholes