Island Density in Homoepitaxial Growth:Improved Monte Carlo Results
arXiv:cond-mat/9707083 · doi:10.1016/S0378-4371(97)00311-7
Abstract
We reexamine the density of two dimensional islands in the submonolayer regime of a homoepitaxially growing surface using the coarse grained Monte Carlo simulation with random sequential updating rather than parallel updating. It turns out that the power law dependence of the density of islands on the deposition rate agrees much better with the theoretical prediction than previous data obtained by other methods if random sequential instead of parallel updating is used.
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