Piezoelectric electron-phonon interaction in impure semiconductors: 2D electrons versus composite fermions

Abstract

We develop a unified treatment of the piesoelectric coupling between two-dimensional electrons and bulk phonons in both cases of zero and strong magnetic fields, the latter corresponding to even denominator filling fractions. In contrast to the case of coupling via the deformation potential, the leading contributions due to impurity-renormalized electron-phonon vertices are not exactly cancelled by processes of inelastic electron-impurity scattering. Electron energy relaxation time, diffusion correction to the conductivity, and phonon emission rate by hot electrons are computed for realistic $GaAs/AlGaAs$ heterostructures.

12 pages, Latex, Nordita report

References in corpus (3)

• Phonon Emission from a 2D Electron Gas: Evidence of Transition to the Hydrodynamic Regime
• Logarithmic temperature dependence of conductivity at half-integer filling factors: Evidence for interaction between composite fermions
• Logarithmic Temperature Dependence of Conductivity at Half Filled Landau Level

Cited by in corpus (5)

• Electron-phonon mediated heat flow in disordered graphene
• Zero-bias anomaly in disordered wires
• Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures
• Electron-Assisted Hopping in Two Dimensions
• Magnetic field-induced giant enhancement of electron-phonon energy transfer in strongly disordered conductors