Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures

Abstract

We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. $(\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q$, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as concentric wires. Using a pseudopotential plane-wave calculation, we identified theoretically a set of numbers ($m,n,p$ and $q$) such that charge separation can exist in ``cylindrical Russian Dolls'': the CBM is localized in the inner GaAs layer, while the VBM is localized in the outer GaAs layer.

latex, 8 pages

References in corpus (1)

• Electronic structure of intentionally disordered AlAs/GaAs superlattices

Cited by in corpus (1)

• Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch