Charge-Relaxation and Dwell Time in the fluctuating Admittance of a Chaotic Cavity

Abstract

We consider the admittance of a chaotic quantum dot, capacitively coupled to a gate and connected to two electron reservoirs by multichannel ballistic point contacts. For a dot in the regime of weak-localization and universal conductance fluctuations, we calculate the average and variance of the admittance using random-matrix theory. We find that the admittance is governed by two time-scales: the classical admittance depends on the RC-time of the quantum dot, but the relevant time scale for the weak-localization correction and the admittance fluctuations is the dwell time. An extension of the circular ensemble is used for a statistical description of the energy dependence of the scattering matrix.

7 pages, RevTeX, 1 figure

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