Competition between the Mott transition and the Anderson localization in 1D disordered interacting electron systems

Abstract

The competition between the Mott transition and the Anderson localization in one dimensional electron systems is studied based upon the bosonization and the renormalization group method. The beta function is calculated up to the second order in the strength of diagonal disorder by using a replica trick. It is found that the sufficiently strong forward scattering by random impurities destroys the Mott-Hubbard gap, and the backward scattering gives rise to the Anderson localization for the resulting gapless state. On the other hand, if the Umklapp interaction is strong enough, the Mott insulating state still overwhelms the Anderson localization.

4 pages, Revtex, figures included, to appear in Phys. Rev. B (Rapid Communication)

References in corpus (2)

• Spinon Bases, Yangian Symmetry and Fermionic Representations of Virasoro Characters in Conformal Field Theory
• Spinons in Conformal Field Theory

Cited by in corpus (7)

• Numerical study of disorder effects on the three-dimensional Hubbard model
• The Effect of Randomness on the Mott State
• Disorder effect on the Friedel oscillations in a one-dimensional Mott insulator
• Effects of Strong Correlation and Randomness in the Vicinity of the Mott Transition in the Quasi-One-Dimensional Hubbard Model
• Variation of the hopping exponent in disordered silicon MOSFETs
• On the Mott glass in the one-dimensional half-filled charge density waves
• Dielectric response of the interacting 1D spinless fermions with disorder