Cohesive energies of cubic III-V semiconductors

Abstract

Cohesive energies for twelve cubic III-V semiconductors with zincblende structure have been determined using an ab-initio scheme. Correlation contributions, in particular, have been evaluated using the coupled-cluster approach with single and double excitations (CCSD). This was done by means of increments obtained for localized bond orbitals and for pairs and triples of such bonds. Combining these results with corresponding Hartree-Fock data, we recover about 92 \% of the experimental cohesive energies.

16 pages, 1 figure, latex

References in corpus (1)

• Electron correlations for ground state properties of group IV semiconductors

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