Unusual temperature dependent resistivity of a semiconductor quantum wire

Abstract

We calculate the electronic resistivity of a GaAs-based semiconductor quantum wire in the presence of acoustic phonon scattering. We find that the usual Drude-Boltzmann transport theory leads to a low temperature activated behavior instead of the well-known Bloch-Grüneisen power law. Many-body electron-phonon renormalization, which is entirely negligible in higher dimensional systems, has a dramatic effect on the low temperature quantum wire transport properties as it qualitatively modifies the temperature dependence of the resistivity from the exponentially activated behavior to an approximate power law behavior at sufficiently low temperatures.

11 pages, RevTex, 4 figures. Also available at http://www-cmg.physics.umd.edu/~lzheng/preprint/

References in corpus (5)

• Quantum Transport in Semiconductor Nanostructures
• Coulomb drag between disordered two-dimensional electron gas layers
• Magnetoconductivity of quantum wires with elastic and inelastic scattering
• Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs
• Nonequilibrium total dielectric function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors