Subband energy in two-band delta-doped semiconductors

Abstract

We study electron dynamics in a two-band delta-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the delta-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si delta-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

REVTeX 3.0, 10 pages, 1 figure available upon request. To apper in Physics Letters A

References in corpus (1)

• Self-consistent analysis of electric field effects on Si $\delta$-doped GaAs

Cited by in corpus (1)

• Topologically protected states in $\delta$-doped junctions with band inversion