Doping Dependence of the Chemical Potential in Cuprate High- Superconductors I: LaSrCuO
arXiv:cond-mat/9406111 · doi:10.1016/0921-4534(94)02395-6
Abstract
The names of the authors, which were inadvertedly lacking in the tex-file submitted two days ago, have been added.
10 pages, figures on request. Revtex, version 2, Materials Science Center Internal Report Number VSGD.94.6.2
Cited by in corpus (4)
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- Pseudogap in Doped Mott Insulators is the Near-neighbour Analogue of the Mott Gap
- The Full Mottness