Reflectionless Tunneling Through a Double-Barrier NS Junction

J. A. Melsen; C. W. J. Beenakker

doi:10.1016/0921-4526(94)90062-0

paper

Reflectionless Tunneling Through a Double-Barrier NS Junction

arXiv:cond-mat/9406034 · doi:10.1016/0921-4526(94)90062-0

Abstract

The resistance is computed of an $NI_{1} NI_{2} S$ junction, where N = normal metal, S = superconductor, and $I_{i}$ = insulator or tunnel barrier (transmission probability per mode $Γ_{i}$ ). The ballistic case is considered, as well as the case that the region between the two barriers contains disorder (mean free path $l$ , barrier separation $L$ ). It is found that the resistance at fixed $Γ_{2}$ shows a {\em minimum} as a function of $Γ_{1}$ , when $Γ_{1} \approx 2 Γ_{2}$ , provided $l ≳ Γ_{2} L$ . The minimum is explained in terms of the appearance of transmission eigenvalues close to one, analogous to the ``reflectionless tunneling'' through a NIS junction with a disordered normal region. The theory is supported by numerical simulations. ***Submitted to Physica B.***

10 pages, REVTeX-3.0, 6 postscript figures appended as self-extracting archive, INLO-PUB-940607m

Reflectionless Tunneling Through a Double-Barrier NS Junction

Abstract

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