On the Origin of the -4.4 eV Band in CdTe(100)"
arXiv:cond-mat/9403062 · doi:10.1103/PhysRevB.50.1980
Abstract
We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at according to the results of Niles and Höchst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.
17 pages, Rev-TEX, CIEA-Phys. 02/94