Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

Abstract

The near-field scanning optical microscopy images of excitonic wavefunctions in self-assembled InAs/GaAs quantum dots are calculated using an empirical pseudopotential method, followed by the configuration interaction (CI) treatment of many-particle effects. We show the wavefunctions of neutral exciton $X^0$ of different polarizations, and compare them to those of the biexciton $XX$ and the charged excitons $X^{+}$ and $X^{-}$. We further show that the exciton $X(P_h\to S_e)$ transition which is forbidden in the far-field photoluminescence has comparable intensities to that of $X(S_h\to S_e)$ transition in the near-field photoluminescence .